Redmond, WA, United States of America

John J Lambe

This inventor holds 5 USPTO granted patents. Top assignees: California Institute of Technology, The United States of America as Represented by the Administrator. Active years: 1989-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John J Lambe. Retrieved from https://idiyas.com/inventor/john-j-lambe-27l2pxad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 215(Granted Patents)


Location History:

  • Altadena, CA (US) (1989)
  • Redmond, WA (US) (1989 - 1990)

Company Filing History:


Years Active: 1989-1990

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5 patents (USPTO):Explore Patents

Title: John J Lambe: Innovator in Microelectronics

Introduction

John J Lambe is a notable inventor based in Redmond, WA (US), recognized for his contributions to microelectronics. He holds a total of 5 patents, showcasing his innovative spirit and technical expertise in the field.

Latest Patents

Lambe's latest patents include a groundbreaking design for a porous floating gate vertical MOSFET device with programmable analog. This invention features an electrically programmable, erasable, read-only memory composed of an array of vertical porous floating gate MOSFET structures. These structures are integrated within a layer of amorphous silicon (a-Si) and utilize parallel conductors to function as source and drain electrodes. The unique design allows for the storage of analog or binary information through the application of high voltage, with the ability to read stored information without erasing it.

Another significant patent involves memory switches based on metal oxide thin films. The MnO.sub.2-x thin films exhibit irreversible memory switching with a high resistance ratio, making them ideal for use as connection elements in microelectronic circuits. These films can be electrically turned off or disconnected by applying an electrical pulse, providing a versatile solution for programmable binary synaptic connections in neural network architectures.

Career Highlights

Throughout his career, John J Lambe has worked with prestigious institutions, including the California Institute of Technology and the United States of America as represented by the Administrator. His work has significantly impacted the field of microelectronics, particularly in memory technology and circuit design.

Collaborations

Lambe has collaborated with notable professionals in his field, including Anilkumar P Thakoor and Alexander W Moopenn. Their joint efforts have contributed to advancements in microelectronic technologies.

Conclusion

John J Lambe's innovative contributions to microelectronics, particularly in memory technology, highlight his role as a leading inventor in the field. His patents reflect a commitment to advancing technology and improving electronic systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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