The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 1990
Filed:
Feb. 16, 1988
Rajeshuni Ramesham, Pasadena, CA (US);
Anilkumar P Thakoor, Pasadena, CA (US);
John J Lambe, Redmond, WA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an 'OFF/ON' resistance ratio of at least about 10.sup.3 and the tailorability of 'ON' state (20) resistance. Such films are potentially extremely useful as a 'connection' element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or 'disconnected' as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.