Palm Bay, FL, United States of America

John J Hackenberg

This inventor holds 5 USPTO granted patents. Top assignees: Harris Corporation, Fairchild Semiconductor Corporation, Intersil Corporation. Active years: 1997-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John J Hackenberg. Retrieved from https://idiyas.com/inventor/john-j-hackenberg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 53(Granted Patents)


Location History:

  • Palm Bay, FL (US) (1997 - 1998)
  • West Melbourne, FL (US) (2001 - 2002)

Company Filing History:


Years Active: 1997-2002

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5 patents (USPTO):Explore Patents

Title: The Innovative Contributions of John J Hackenberg

Introduction

John J Hackenberg is a notable inventor based in Palm Bay, FL (US), recognized for his significant contributions to the field of semiconductor technology. With a total of 5 patents, Hackenberg has made strides in the development of advanced transistor devices that enhance performance and efficiency.

Latest Patents

One of Hackenberg's latest patents is focused on a power trench transistor device source region formation using a silicon spacer. This innovative device features a buried gate to source dielectric within a gate trench region. A thick oxide, either grown or deposited, is utilized to define the height of the trench walls. The body region is initially formed through selective epitaxial growth and etch back, while source regions are also created using selective epitaxial growth. The process culminates in the formation of the body through selective epitaxial growth and etch back. After removing the oxide from the trench, the trench walls are oxidized to create a gate oxide, and doped polysilicon fills the trench to establish a gate. This method simplifies the fabrication of power trench gated devices and increases contact surface area without enlarging the device size.

Career Highlights

Throughout his career, John J Hackenberg has worked with prominent companies such as Harris Corporation and Intersil Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Hackenberg has collaborated with notable professionals in the field, including Jack H Linn and Jun Zeng. These partnerships have likely fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

John J Hackenberg's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in power trench transistor devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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