Corona, CA, United States of America

John J Ennis

This inventor holds 2 USPTO granted patents and 4 published patent applications. Top assignees: Rockwell International Corporation, United States of America as Represented by the Secretary of the Air Force. Active years: 1985-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John J Ennis. Retrieved from https://idiyas.com/inventor/john-j-ennis

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1985-1994

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2 patents (USPTO):Explore Patents

Title: John J Ennis: Innovator in Gallium Arsenide Technology

Introduction

John J Ennis is a notable inventor based in Corona, California. He has made significant contributions to the field of electronics, particularly in the development of gallium arsenide technology. With a total of 2 patents to his name, Ennis has demonstrated his expertise and innovative spirit in the industry.

Latest Patents

Ennis's latest patents include the GaAs driver circuit and the tri-state type driver circuit. The GaAs driver circuit comprises a gallium arsenide driver with float capability for logic high and logic low signals. It includes logic means for receiving an input signal and providing logic high and low signals. Level shift means responsive to the high and low signals downshift the voltage levels. Common gate means responsive to the downshifted signal voltage levels amplify these signals, while output source-follower means provide output signals to a pad. The tri-state type driver circuit features an FET complementary pair that provides the output to a data line. A data input line is coupled to the gate of the P-FET via an OR gate configuration and to the gate of the N-FET via an AND gate configuration. The output of each gate configuration is cross-connected to an input of the other. This design ensures that both FETs are not ON at the same time, preventing undesirable power flow.

Career Highlights

Throughout his career, John J Ennis has worked with prominent organizations, including Rockwell International Corporation and the United States of America as represented by the Secretary of the Air Force. His work in these institutions has contributed to advancements in electronic technologies.

Collaborations

Ennis has collaborated with notable individuals such as Gary L Heimbigner and Robert K Booher. These partnerships have likely fostered innovation and development in his projects.

Conclusion

John J Ennis is a distinguished inventor whose work in gallium arsenide technology has made a lasting impact in the field of electronics. His patents reflect his innovative approach and dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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