Essex Junction, VT, United States of America

John H Givens

This inventor holds 4 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1993-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John H Givens. Retrieved from https://idiyas.com/inventor/john-h-givens-bqbmiib0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 101(Granted Patents)


Location History:

  • Essex, VT (US) (1993)
  • Essex Junction, VT (US) (1996 - 1999)

Company Filing History:


Years Active: 1993-1999

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4 patents (USPTO):Explore Patents

Title: Innovations by John H Givens: A Journey in Semiconductor Technology

Introduction

John H Givens, an accomplished inventor based in Essex Junction, VT, has made significant contributions to the field of semiconductor technology. He holds a remarkable total of four patents, showcasing his expertise and innovative spirit in developing cutting-edge electrical components.

Latest Patents

Among his latest patents, Givens has focused on creating low-leakage borderless contacts to doped regions within semiconductor devices. This innovative solution involves a meticulous process where contact openings are etched adjacent to first and second electronic elements of opposite dopant types. A thin doped polysilicon layer is then conformally deposited, while processes are executed to protect the electronic element of the similar dopant type. The technique includes removing the polysilicon layer adjacent to the oppositely doped electronic element and diffusing dopants into the side wall of the similar dopant-type element. Finally, tungsten is deposited within the contact openings to enhance device efficiency.

Another patent from Givens that stands out is the "Process for making low-leakage contacts." This patent mirrors the advanced techniques applied in his first patent, emphasizing the innovative steps necessary to achieve effective low-leakage connections in semiconductor devices. His work is pivotal in improving performance and reliability in modern electronic circuits.

Career Highlights

John H Givens is associated with the International Business Machines Corporation (IBM), a leading company in technology and innovation. His tenure at IBM has allowed him to collaborate with some of the brightest minds in the industry. Givens' patents are a testament to his commitment to advancing semiconductor technology and his ability to address the challenges of modern electronics.

Collaborations

Throughout his career, Givens has worked alongside talented individuals such as Charles W Koburger III and Jerome Brett Lasky. These collaborations have undoubtedly enriched his work and contributed to the success of projects aimed at revolutionizing semiconductor designs and manufacturing processes.

Conclusion

John H Givens stands as an influential figure in the realm of semiconductor innovation. With his multiple patents and collaborative efforts at IBM, he continues to push the boundaries of technology, ensuring that his contributions will have lasting impacts in the electronics industry. His dedication to low-leakage contact technology promises to inspire future advancements in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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