The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 1999

Filed:

Aug. 16, 1996
Applicant:
Inventors:

John Howard Givens, Essex Junction, VT (US);

Charles William Koburger, III, Essex Junction, VT (US);

Jerome Brett Lasky, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257774 ; 257382 ; 257751 ; 257754 ;
Abstract

A semiconductor device having low-leakage borderless contacts is formed by etching contact openings adjacent first and second electronic elements of opposite dopant type, conformally depositing a thin doped polysilicon layer, protecting the electronic element of similar dopant-type, removing the thin doped polysilicon layer adjacent the oppositely doped electronic element diffusing dopant from said polysilicon layer into a side wall of the electronic element of similar dopant-type, and then depositing tungsten within the contact openings.


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Givens, John. (1999). Low-leakage borderless contacts to doped regions (U.S. Patent No. 5894169). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5894169

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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