Company Filing History:
Years Active: 1976
Title: John Gionis: Innovator in High-Speed Memory Technology
Introduction
John Gionis is a notable inventor based in Sunnyvale, CA. He has made significant contributions to the field of memory technology, particularly with his innovative patent related to high-speed ECL compatible MOS-RAM. His work has implications for the efficiency and performance of electronic devices.
Latest Patents
Gionis holds a patent for a high-speed ECL compatible MOS-RAM. This technology is a metal-oxide-silicon (MOS) random-access memory that is emitter-coupled logic (ECL) compatible. It operates without the need for high-level clock inputs. The memory utilizes pseudo-static cells that are refreshed with an asynchronous charge-pump signal generated on the memory chip. Buffers in this design utilize the ECL reference signal to ensure compatibility. Additionally, the memory employs dynamic decoding in two separate levels of decoding.
Career Highlights
John Gionis is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has allowed him to be at the forefront of technological advancements in memory systems. Gionis's innovative approach has contributed to the development of faster and more efficient memory solutions.
Collaborations
Throughout his career, Gionis has collaborated with notable colleagues, including Mark S Ebel and William M Regitz. These collaborations have fostered an environment of innovation and have led to advancements in memory technology.
Conclusion
John Gionis is a distinguished inventor whose work in high-speed memory technology has made a significant impact in the field. His patent for ECL compatible MOS-RAM showcases his innovative spirit and dedication to advancing electronic memory solutions.