This inventor holds 1 USPTO granted patent. Top assignee: At&t Bell Laboratories. Active years: 1992.
Company Filing History:
Years Active: 1992
Title: John F. Miner: Innovator in Oxide Layer Formation
Introduction
John F. Miner is a notable inventor based in Piscataway, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in the formation of oxide layers. His innovative methods have paved the way for advancements in electronic devices.
Latest Patents
John F. Miner holds a patent for a "Method of forming oxide layers by bias ECR plasma deposition." This method describes the process of forming silicon dioxide layers by reacting oxygen with TEOS or TMCTS. The technique allows for the creation of high-quality, void-free layers over conductor patterns with high-aspect-ratio intermetallic spacings. He has 1 patent to his name.
Career Highlights
Miner has had a distinguished career at AT&T Bell Laboratories, where he has been involved in cutting-edge research and development. His work has contributed to the advancement of semiconductor manufacturing processes, enhancing the performance and reliability of electronic components.
Collaborations
Throughout his career, John F. Miner has collaborated with esteemed colleagues, including Pang-Dow Foo and Ajit S. Manocha. These partnerships have fostered innovation and have been instrumental in the success of various projects.
Conclusion
John F. Miner is a prominent figure in the field of semiconductor technology, with a focus on oxide layer formation. His contributions have had a lasting impact on the industry, showcasing the importance of innovation in advancing technology.