The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1992
Filed:
Apr. 11, 1991
Applicant:
Inventors:
Pang-Dow Foo, Berkeley Heights, NJ (US);
Ajit S Manocha, Allentown, PA (US);
John F Miner, Piscataway, NJ (US);
Chien-Shing Pai, Bridgewater, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
20419232 ; 427 47 ; 427 99 ; 4272553 ; 427228 ; 427238 ; 20419237 ;
Abstract
A method of forming silicon dioxide layers by bias ECR is described. The layers are formed by reacting oxygen with TEOS or TMCTS. High-quality, void-free layerc can be formed over conductor patterns having high-aspect-ratio intermetallic spacings.