John E Dickman

Title: John E. Dickman and Semiconductor Fabrication Innovations.

Introduction

John E. Dickman is an inventor associated with semiconductor fabrication innovations in Miamisburg, Ohio. His work includes processes for manufacturing Zener diodes and forming electrical contacts in integrated circuits. He is associated with NCR Corporation and holds 2 patents.

Latest Patents

Dickman’s patent, “Method of Fabricating Zener Diodes,” describes a process for producing Zener diodes from an integrated-circuit structure. The method uses selective oxidation and etching, followed by ion implantation and annealing. These steps position the diode junction below the substrate surface and away from etch-damaged areas, supporting stable and reproducible breakdown characteristics.

His patent, “Epitaxial Contact Fabrication Process,” presents a method for connecting an epitaxial layer, well, or substrate to a metallic interconnect in a semiconductor wafer. The process establishes self-aligned contact locations early in fabrication, protects them during intermediate operations, and later opens and enhances the contact regions before metal deposition and patterning.

Career Highlights

Dickman’s patent work addresses practical challenges in integrated-circuit manufacturing, including reliable diode formation and electrical contact fabrication. Both inventions use carefully sequenced masking, etching, implantation, and processing steps to control semiconductor structures.

Collaborations

Dickman’s listed coworkers include Raymond A. Turi and James A. Topich. Their shared association reflects collaborative work connected with semiconductor technology and patent development.

Conclusion

John E. Dickman’s two patents document contributions to semiconductor fabrication, with methods designed to improve Zener diode characteristics and create self-aligned electrical contacts in integrated circuits.