Lund, Sweden

Johannes Svensson

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal1 out of 832,880 
Other
 patents

Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Innovations of Johannes Svensson

Introduction

Johannes Svensson is a notable inventor based in Lund, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of vertical nanowire MOSFETs. His innovative approach has led to advancements that enhance the performance of electronic devices.

Latest Patents

Johannes holds a patent for a "Method for vertical gate-last process." This method involves the fabrication of vertical nanowire MOSFETs using a gate-last process. The process begins with the fabrication of the top ohmic electrode, which serves as a mask for forming a gate recess through etching techniques. The gate is then formed, allowing for a substantial reduction in access resistance. This innovation is crucial for improving the efficiency of modern electronic components.

Career Highlights

Throughout his career, Johannes has worked with various companies, including C2amps AB. His work has focused on developing cutting-edge technologies that push the boundaries of what is possible in the semiconductor industry. His expertise and innovative mindset have made him a valuable asset in his field.

Collaborations

Johannes has collaborated with esteemed colleagues such as Lars-Erik Wernersson and Martin Berg. These partnerships have fostered an environment of creativity and innovation, leading to groundbreaking advancements in technology.

Conclusion

Johannes Svensson's contributions to the field of semiconductor technology exemplify the spirit of innovation. His patented methods and collaborative efforts continue to influence the industry, paving the way for future advancements.

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