Stuttgart, Germany

Joerg Butschke

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joerg Butschke. Retrieved from https://idiyas.com/inventor/joerg-butschke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 26(Granted Patents)


Company Filing History:

goldMedal1 out of 834,513 
Other
 patents

Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Joerg Butschke: Innovator in Semiconductor Technology

Introduction

Joerg Butschke is a notable inventor based in Stuttgart, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of membrane masks. His innovative approach addresses critical challenges in the industry.

Latest Patents

Joerg Butschke holds a patent for a "Method for fabricating positionally exact surface-wide membrane masks." This invention utilizes a silicon-on-insulator (SOI) substrate to mitigate inhomogeneous mechanical stresses in semiconductor layers. By converting these stresses into a more homogeneous state, his method enhances the structuring process of semiconductor layers, leading to improved performance and reliability.

Career Highlights

Throughout his career, Joerg has focused on advancing semiconductor fabrication techniques. His work has been instrumental in developing methods that enhance the precision and quality of semiconductor devices. With a patent count of 1 patent, he continues to push the boundaries of innovation in this field.

Collaborations

Joerg Butschke has collaborated with talented professionals such as Florian Letzkus and Ernst Haugeneder. These partnerships have fostered a creative environment that encourages the exchange of ideas and expertise, further driving innovation in semiconductor technology.

Conclusion

Joerg Butschke's contributions to the semiconductor industry exemplify the spirit of innovation. His patented methods for fabricating membrane masks represent a significant advancement in the field. Through his work and collaborations, he continues to influence the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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