Freiburg, Germany

Jochen Rentsch

This inventor holds 1 USPTO granted patent. Top assignees: Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.v., Ultra High Vacuum Solutions Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jochen Rentsch. Retrieved from https://idiyas.com/inventor/jochen-rentsch-pngibopf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jochen Rentsch and Solar Cell Manufacturing

Introduction

Jochen Rentsch is an inventor associated with Freiburg, Germany. His patent work includes a method for producing a solar cell with a rear-side contact incorporating a tunnel barrier.

Latest Patents

Rentsch is credited with 1 patent, titled “Method for Producing a Solar Cell.” The disclosed method begins with a monocrystalline wafer that has front and rear sides and is provided with silicon and a dopant. A tunnel barrier is formed on the wafer, followed by deposition of a doped polycrystalline or amorphous layer containing silicon. Gas-phase etching removes this layer from the front side, supporting the formation of a solar cell with a rear-side contact.

Career Highlights

Rentsch’s professional affiliations include Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. and Ultra High Vacuum Solutions Ltd. His patent reflects work on semiconductor processing techniques relevant to solar-cell manufacturing.

Collaborations

Rentsch’s listed coworkers include Marc Hofmann and Sebastian Mack. These names provide context for his professional network, though the supplied information does not specify their roles in the patent.

Conclusion

Jochen Rentsch’s recorded invention addresses a solar-cell production method that combines a tunnel barrier, a doped silicon layer, and front-side gas-phase etching.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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