The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Jul. 21, 2023
Applicants:

Fraunhofer-gesellschaft Zur Forderung Der Angewandten Forschung E.v., Munich, DE;

Ultra High Vacuum Solutions Ltd, Dublin, IE;

Inventors:

Marc Hofmann, Freiburg, DE;

Sebastian Mack, Freiburg, DE;

Bishal Kafle, Freiburg, DE;

Jochen Rentsch, Freiburg, DE;

Nabeel Wahab Khan, Freiburg, DE;

Laurent Clochard, Dublin, IE;

Edward Duffy, Dublin, IE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/00 (2025.01); H10F 10/165 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 71/121 (2025.01); H10F 10/165 (2025.01);
Abstract

The embodiments relate to a method for producing a solar cell having a rear-side contact with a tunnel barrier. A monocrystalline wafer having a front side and a rear side may be provided with silicon and a dopant. A tunnel barrier is produced on the wafer, and a polycrystalline or amorphous layer is deposited on the tunnel barrier. The polycrystalline or amorphous layer includes silicon and a dopant. The polycrystalline or amorphous layer is removed on the front side by gas-phase etching.


Find Patent Forward Citations

Hofmann, Marc. (2026). Method for producing a solar cell (U.S. Patent No. 12701816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12701816

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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