Saint-Égrève, France

Jocelyne Mourier

This inventor holds 3 USPTO granted patents. Top assignees: Sgs-Thomson Microelectronics S.a., STMicroelectronics, Other. Active years: 1999-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jocelyne Mourier. Retrieved from https://idiyas.com/inventor/jocelyne-mourier

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1999-2002

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3 patents (USPTO):Explore Patents

Title: The Innovative Journey of Jocelyne Mourier

Introduction

Jocelyne Mourier is a notable inventor based in Saint Egreve, France. With a total of three patents to her name, she has made significant contributions to the field of integrated circuit technology and silicon deposition methods. Her innovative approaches reflect her dedication to advancing technology and improving manufacturing processes.

Latest Patents

Jocelyne Mourier's latest patents showcase her expertise in specialized manufacturing methods. One of her patents, titled "Method of formation of a capacitor on an integrated circuit," outlines a comprehensive approach to manufacturing capacitors involving various steps such as metal deposition, etching, insulating layer formation, and metal level applications. This method enhances the efficiency of capacitor fabrication in integrated circuits.

Another significant patent by Jocelyne is the "Method of deposition of a single-crystal silicon region." This invention describes a technique for depositing a silicon layer on a single-crystal silicon substrate with a different orientation. The method includes creating interstitial defects and performing silicon deposition under specific temperature conditions, which enhances the properties of the silicon layer produced.

Career Highlights

Throughout her career, Jocelyne Mourier has gained invaluable experience, particularly during her tenure at SGS-Thomson Microelectronics S.A. Her work at this prominent company allowed her to collaborate with leading experts and further her research in semiconductor technologies.

Collaborations

In her professional journey, Jocelyne Mourier has collaborated with notable colleagues, including Yvon Gris and Germaine Troillard. These collaborations have fostered a rich exchange of ideas and innovations, contributing to the advancements made in her patented technologies.

Conclusion

Jocelyne Mourier exemplifies the spirit of innovation in the technology sector. With her extensive patents and collaborative efforts, she has positively impacted the field of integrated circuits and silicon deposition. Her work continues to inspire future inventors and highlights the importance of technological advancements in today’s industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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