The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Jan. 26, 1999
Applicant:
Inventors:
Assignee:
STMicroelectronics S.A., Gentilly, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ;
U.S. Cl.
CPC ...
117106 ; 117913 ; 117935 ;
Abstract
The present invention relates to a method of deposition of a silicon layer on a single-crystal silicon substrate 11 , so that the silicon layer is a single-crystal layer, but of different orientation than the substrate, including the steps of defining a window 13 on the substrate; creating inside the window interstitial defects 14 with an atomic proportion lower than one for one hundred; and performing a silicon deposition 15 in conditions generally corresponding to those of an epitaxial deposition, but at a temperature lower than 750.degree. C.