Joan M Redwing

Title: The Innovative Contributions of Joan M. Redwing

Introduction

Joan M. Redwing is a prominent inventor residing in Phoenix, Arizona. With a remarkable portfolio of nine patents, she has made significant contributions to the fields of semiconductor technology and materials science. Redwing’s innovative work primarily focuses on high electron mobility transistors (HEMTs) and the fabrication methods associated with them.

Latest Patents

Among her latest patents, Joan Redwing has developed an indium gallium nitride channel high electron mobility transistor, along with a method for making such a device. This gallium nitride-based HEMT features a channel layer made from an InGaN alloy and may incorporate an AlGaN/InGaN heterostructure. The design allows for flexibility in construction, whether including an aluminum-containing layer or being fashioned solely from GaN/InGaN or InGaN/InGaN structures.

Another noteworthy patent involves the creation of a III-V nitride substrate boule. This boule is produced through high-rate vapor phase growth, enabling the derivation of wafers suitable for microelectronic device fabrication. The specifications highlight its microelectronic quality, with dimensions exceeding 1 centimeter and a top surface defect density of fewer than 10 defects per cm². This involves using native Group III-V nitride seed crystals to grow the material at impressive rates, enhancing the efficiency of microelectronic applications.

Career Highlights

Throughout her career, Joan has contributed to notable companies, including Advanced Technology Materials, Inc. and Cree GmbH. Her expertise in semiconductor materials and devices has led her to become a recognized figure in her field, advancing innovations that enhance device performance and reliability.

Collaborations

Joan Redwing has collaborated with esteemed colleagues such as Robert P. Vaudo and Jeffrey S. Flynn. These partnerships have fostered a creative environment that has further pushed the boundaries of research and development in semiconductor technology.

Conclusion

Joan M. Redwing's contributions to innovation in semiconductor technologies and her impressive collection of patents showcase her exceptional talent and dedication. Her work not only impacts the technical landscape but also inspires future generations of inventors and engineers in the pursuit of groundbreaking advancements.