The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2013
Filed:
Aug. 23, 2005
Applicants:
Joan M. Redwing, State College, PA (US);
Edwin L. Piner, Phoenix, AZ (US);
Inventors:
Joan M. Redwing, State College, PA (US);
Edwin L. Piner, Phoenix, AZ (US);
Assignee:
Cree, Inc., Durham, NC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2005.12);
U.S. Cl.
CPC ...
Abstract
A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy. Such device may comprise an AlGaN/InGaN heterostructure, e.g., in a structure including a GaN layer, an InGaN layer over the GaN layer, and a (doped or undoped) AlGaN layer over the InGaN layer. Alternatively, the HEMT device of the invention may be fabricated as a device which does not comprise any aluminum-containing layer, e.g., a GaN/InGaN HEMT device or an InGaN/InGaN HEMT device.