Advanced Technology Materials, Inc.

Cree Gmbh

The Penn State Research Foundation

Joan M Redwing

Robert P Vaudo

Michael Albert Tischler

Jeffrey S Flynn

George R Brandes

Duncan W Brown

Michael A Tischler

Edwin L Piner

Darrell G Schlom

Zi-Kui Liu

Xiaoxing Xi

Xianghui Zeng

Alexej Pogrebnyakov

A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy. Such device may comprise an AlGaN/InGaN heterostructure, e.g., in a structure including a GaN layer, an InGaN layer over the GaN layer, and a (doped or undoped) AlGaN layer over the InGaN layer. Alternatively, the HEMT device of the invention may be fabricated as a device which does not comprise any aluminum-containing layer, e.g., a GaN/InGaN HEMT device or an InGaN/InGaN HEMT device.

Indium gallium nitride channel high electron mobility transistors, and method of making the same

A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 10defects cm. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.

III-V nitride substrate boule and method of making and using the same

A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 10defects cm. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.

Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Method for producing boride thin films

A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 10 defects cm . The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.

A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

GaN-based devices using thick (Ga, Al, In)N base layers

A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm.sup.-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

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Phoenix, AZ, United States of America

Joan M Redwing