Nijmegen, Netherlands

Joachim Stache

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nexperia B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joachim Stache. Retrieved from https://idiyas.com/inventor/joachim-stache-h1v4bn6z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Joachim Stache: Innovator in Semiconductor Technology

Introduction

Joachim Stache is a notable inventor based in Nijmegen, Netherlands. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Joachim Stache holds a patent for a semiconductor product and method for producing a semiconductor product. This invention includes a base region doped with a first conductivity type, a plurality of stripe regions doped with a second conductivity type on the upper surface of the base region, and a metal layer that defines a Schottky barrier with the base region. The design allows for efficient interaction between the stripe regions and cell regions, enhancing the performance of semiconductor devices. He has 1 patent to his name.

Career Highlights

Stache is currently associated with Nexperia B.V., a company known for its expertise in semiconductor solutions. His work at Nexperia has positioned him as a key player in advancing semiconductor technologies.

Collaborations

Throughout his career, Joachim has collaborated with talented professionals, including Massimo Cataldo Mazzillo and Sönke Habenicht. These collaborations have further enriched his contributions to the semiconductor industry.

Conclusion

Joachim Stache's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in advancing modern electronics. His patent reflects a commitment to enhancing semiconductor performance, making him a valuable asset in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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