Stuttgart, Germany

Joachim Bill

This inventor holds 1 USPTO granted patent. Top assignee: Max-Planck-Gesellschaft Zur Förderung Der Wissenschaften E. V. . Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joachim Bill. Retrieved from https://idiyas.com/inventor/joachim-bill

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Joachim Bill - Innovator in Epitactic GaN Layer Production

Introduction

Joachim Bill is a notable inventor based in Stuttgart, Germany. He has made significant contributions to the field of materials science, particularly in the production of epitactic Gallium Nitride (GaN) layers. His innovative work has implications for various applications in electronics and optoelectronics.

Latest Patents

Joachim Bill holds a patent for the "Production of epitactic GaN layers on substrates." This invention relates to a process for the application of an epitactic GaN layer to a substrate through the pyrolysis of precursor compounds. This advancement is crucial for enhancing the performance of electronic devices.

Career Highlights

Bill is associated with the Max Planck Society for the Advancement of Science, a prestigious research institution known for its cutting-edge scientific research. His work at this institution has allowed him to explore and develop innovative technologies that push the boundaries of current scientific understanding.

Collaborations

Throughout his career, Joachim Bill has collaborated with esteemed colleagues, including Dieter Rodewald and Fritz Aldinger. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing the quality of their research.

Conclusion

Joachim Bill's contributions to the field of epitactic GaN layer production exemplify the spirit of innovation and collaboration in scientific research. His work continues to influence advancements in technology and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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