Jo-Won Lee

Title: Jo-Won Lee: Innovator in CMOS Technology

Introduction

Jo-Won Lee is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of complementary metal oxide semiconductor (CMOS) thin film transistors. His innovative work has implications for various electronic devices, enhancing their performance and efficiency.

Latest Patents

Jo-Won Lee holds a patent for a CMOS thin film transistor that includes a common gate, a logic device comprising the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor. This invention features a base substrate and a semiconductor layer formed on it. The design incorporates both PMOS and NMOS transistors on a single semiconductor layer, intersecting each other, with a common gate positioned at the intersection. Additionally, a Schottky barrier inducing material layer is formed on the source and drain of the PMOS transistor. This innovative approach enhances the functionality and efficiency of CMOS technology.

Career Highlights

Jo-Won Lee is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced electronic components.

Collaborations

Throughout his career, Jo-Won Lee has collaborated with notable colleagues, including Moon-Kyung Kim and Yoon-dong Park. These collaborations have fostered a creative environment that promotes innovation and the advancement of technology.

Conclusion

Jo-Won Lee's contributions to CMOS technology exemplify the spirit of innovation in the semiconductor industry. His patent and work at Samsung Electronics Co., Ltd. highlight his role as a key player in advancing electronic device technology.