Samsung Electronics Co., Ltd.

Jo-Won Lee

Chung-woo Kim

Yoon-dong Park

Moon-Kyung Kim

A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.

CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor

Growing community of inventors

Gyeonggi-do, South Korea

Jo-Won Lee