Shanghai, China

Jiwel Jiao

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Jiwel Jiao: Innovator in RF MEMS Technology

Introduction

Jiwel Jiao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of radio frequency microelectromechanical systems (RF MEMS). His innovative work has led to the development of a unique patent that showcases his expertise in this advanced technology.

Latest Patents

Jiwel Jiao holds a patent for a Tri-state RF switch. This invention includes a first well formed in a first substrate, with a first input signal line and a first output signal line creating a gap in the first well. Additionally, it features a post bar that forms a boundary between the second and third wells in a second substrate. The design incorporates multiple input and output signal lines, along with a membrane that crosses various gaps, enhancing the functionality of RF MEMS switches.

Career Highlights

Jiwel Jiao is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of innovation in RF technology. His work has been instrumental in advancing the capabilities of MEMS devices, making them more efficient and effective for various applications.

Collaborations

Throughout his career, Jiwel has collaborated with notable colleagues, including Hyung Ki Choi and Yuelin Wang. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Jiwel Jiao's contributions to RF MEMS technology exemplify his dedication to innovation and excellence. His patent for the Tri-state RF switch is a testament to his skills as an inventor. As he continues his work at Samsung Electronics, Jiwel is poised to make even more significant impacts in the field of technology.

Profile summary based on public USPTO records.
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