The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Feb. 02, 2006
Hyung Choi, Seongnam-si, KR;
Jiwel Jiao, Shanghai, CN;
Yuelin Wang, Shanghai, CN;
Xianglong Xing, Shanghai, CN;
Hyung Choi, Seongnam-si, KR;
Jiwel Jiao, Shanghai, CN;
Yuelin Wang, Shanghai, CN;
Xianglong Xing, Shanghai, CN;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.