Company Filing History:
Years Active: 2001
Title: **Innovative Contributions of Jiunn-Hsien Lin in Semiconductor Technology**
Introduction
Jiunn-Hsien Lin, based in Yungkang, Taiwan, is a notable inventor specializing in semiconductor technologies. With a focus on enhancing conductive line formation on semiconductor substrates, Lin's work has contributed to the advancement of electronic devices.
Latest Patents
Jiunn-Hsien Lin holds a patent titled "Method for forming conductive line." This innovative method involves an improved process for creating conductive lines on semiconductor substrates. The process includes several key steps: firstly, a conductive layer is deposited on the substrate; secondly, a patterned photoresist layer is applied; subsequently, three etching steps are conducted to define and refine the conductive line's structure. Ultimately, a dielectric layer is formed to cover the conductive line, followed by a planarization process. This patent highlights Lin's expertise in enhancing the manufacturing processes within the semiconductor industry.
Career Highlights
Jiunn-Hsien Lin has made significant strides in his career at United Semiconductor Corporation. His work revolves around developing methods that improve the efficiency and effectiveness of semiconductor fabrication. Lin's contributions are pivotal in driving forward the capabilities of electronic components, facilitating the advancement of modern technology.
Collaborations
Throughout his career, Lin has collaborated with fellow innovator Wen-Pin Kuo. Their partnership exemplifies the collaborative spirit in research and development, fostering innovations in semiconductor technology through the sharing of ideas and expertise.
Conclusion
Jiunn-Hsien Lin's dedication to innovation in the semiconductor field is evidenced by his patent and collaborative efforts. His work is instrumental in shaping the future of electronic devices, reflecting the importance of inventors in the ever-evolving landscape of technology.