Company Filing History:
Years Active: 1998-1999
Title: The Innovations of Jiunn Hsien Lin
Introduction
Jiunn Hsien Lin is a prominent inventor based in Yungkang, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on methods that enhance the manufacturing processes of integrated circuits.
Latest Patents
Jiunn Hsien Lin's latest patents include a method of forming a contact via a semiconductor substrate. This method involves forming a wiring, a first insulator layer, and a spin-on glass layer. Fluorine ions are implanted into the spin-on glass layer, followed by the formation of a second insulator layer. The wiring is then exposed by patterning the layers accordingly. His second patent details a low-temperature method of manufacturing epitaxial titanium silicide. This innovative approach reduces the processing temperature, making it suitable for integrated circuit manufacturing. The resulting epitaxial titanium silicide is free of grain boundaries, which lowers electrical resistance.
Career Highlights
Jiunn Hsien Lin is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His expertise in semiconductor processing has positioned him as a valuable asset to the organization.
Collaborations
Throughout his career, Jiunn Hsien Lin has collaborated with notable colleagues, including Shuh-Ren Chen and Ching-Hsing Hsieh. These partnerships have contributed to the advancement of technology in their field.
Conclusion
Jiunn Hsien Lin's innovative patents and contributions to semiconductor technology highlight his role as a key inventor in the industry. His work continues to influence the development of efficient manufacturing processes for integrated circuits.