The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Jun. 19, 1997
Applicant:
Inventors:
Ching-Hsing Hsieh, Taipei Hsien, TW;
Chin-Ching Hsu, Fen Shan, TW;
Chen-Chih Tsai, Hsinchu, TW;
Jiunn Hsien Lin, Yungkang, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ;
U.S. Cl.
CPC ...
438699 ; 438697 ; 438700 ; 438760 ; 438783 ; 438646 ; 427527 ; 427 96 ;
Abstract
A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.