Ithaca, NY, United States of America

Jisung Park

This inventor holds 5 USPTO granted patents and 2 published patent applications. Top assignee: Cornell University. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jisung Park. Retrieved from https://idiyas.com/inventor/jisung-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 80.0

Average Co-Inventor Count = 1.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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5 patents (USPTO):Explore Patents

Title: Innovations of Jisung Park

Introduction

Jisung Park is an accomplished inventor based in Ithaca, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on developing high-mobility p-type oxide semiconductors and micron-scale tin oxide-based electronic devices.

Latest Patents

One of his latest patents is titled "Correlated orbitals yield high-mobility, back-end-of-line compatible p-type oxide semiconductor." This patent describes various methods for fabricating p-type semiconductors that are compatible with industrial processes. The first method involves forming a buffer layer on a substrate, followed by a palladium oxide layer, which is then annealed and capped. Each step is performed at predefined temperatures, with the substrate, buffer layer, and cap layer potentially being magnesium oxide. Another method includes forming a palladium oxide layer over a titanium dioxide substrate, which is also annealed and cooled at different temperatures.

Another notable patent is for "Micron scale tin oxide-based semiconductor devices." This invention utilizes reactive-ion etching to create micron-scale electronic devices from semiconductor films containing tin oxides, such as barium stannate (BaSnO). The resulting devices exhibit high mobility, drain current, and on-off ratios while maintaining the essential qualities of the tin oxide semiconductor.

Career Highlights

Jisung Park is affiliated with Cornell University, where he continues to advance research in semiconductor technologies. His innovative approaches have positioned him as a key figure in the development of next-generation electronic devices.

Collaborations

He has collaborated with notable colleagues, including Christopher Parzyck and Jiaxin Sun, contributing to a dynamic research environment that fosters innovation.

Conclusion

Jisung Park's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing electronic device capabilities. His patents reflect a commitment to enhancing the performance and compatibility of semiconductor materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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