The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Dec. 20, 2022
Cornell University, Ithaca, NY (US);
Darrell G. Schlom, Ithaca, NY (US);
Jiaxin Sun, Fremont, CA (US);
Jisung Park, Sunnyvale, CA (US);
Kyle Shen, Ithaca, NY (US);
Christopher Parzyck, Freeville, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
Various embodiments disclosed herein provide for several methods of fabricating p-type semiconductors with industrially relevant hole mobilities that are back end of the line (BEOL) compatible. A first method of fabrication includes forming a buffer layer on a substrate, forming a palladium oxide layer over the buffer layer, annealing the palladium oxide layer, and then forming a cap layer over the palladium oxide layer, then cooling the stack, wherein each step is performed at a variety of predefined temperatures. Each of the substrate, buffer layer and cap layer can be magnesium oxide. A second method includes forming a palladium oxide layer over a titanium dioxide substrate, annealing the stack, and then cooling the stack, all performed at a different variety of predefined temperatures.