This inventor holds 1 USPTO granted patent. Top assignee: Hitachi Cable, Inc.. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2014
Title: The Innovations of Jiro Wada
Introduction
Jiro Wada is a notable inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced transistor devices.
Latest Patents
Jiro Wada holds a patent for a transistor device. This innovative device is composed of a compound semiconductor and features a multilayer structure. It includes a high electron mobility transistor (HEMT) and a heterojunction bipolar transistor (HBT) that are overlapped on the same substrate. The epitaxial layer contains an indium gallium phosphide layer (InGaP) with a band gap energy set to 1.91 eV or more. This patent showcases his expertise in enhancing the performance of semiconductor devices.
Career Highlights
Wada is associated with Hitachi Cable, Inc., where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of high-performance electronic components. He has a strong background in engineering and innovation, which has enabled him to excel in his field.
Collaborations
Some of Jiro Wada's coworkers include Takeshi Meguro and Yoshihiko Moriya. Their collaboration has fostered a productive environment for innovation and research within the company.
Conclusion
Jiro Wada's contributions to the field of semiconductor technology are noteworthy. His patent for a novel transistor device exemplifies his commitment to innovation. Through his work at Hitachi Cable, Inc., he continues to influence the future of electronic components.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile