The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jul. 06, 2012
Applicants:
Takeshi Meguro, Kitaibaraki, JP;
Jiro Wada, Hitachi, JP;
Yoshihiko Moriya, Hitachi, JP;
Inventors:
Assignee:
Hitachi Cable, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a transistor device, which is composed of a compound semiconductor, having a multilayer structure in which a high electron mobility transistor (HEMT) and a heterojunction bipolar transistor (HBT) are overlapped on the same substrate and epitaxial-grown thereon, wherein a band gap energy of an indium gallium phosphide layer (InGaP) included in an epitaxial layer, is set to 1.91 eV or more.