Aichi, Japan

Jiro Sakata

This inventor holds 1 USPTO granted patent. Top assignee: Denso Corporation. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiro Sakata. Retrieved from https://idiyas.com/inventor/jiro-sakata-0eua7zuc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Jiro Sakata and Semiconductor Manufacturing Innovation.

Introduction

Jiro Sakata is an inventor associated with Aichi, Japan, and Denso Corporation. His patent work addresses heat treatment in semiconductor-device manufacturing.

Latest Patents

The supplied information lists one patent for Sakata: “Method of Manufacturing Semiconductor Device.” The method heat-treats an ion-implanted silicon substrate in a furnace at 950°C or higher for at least 15 minutes before forming an oxide film. Nitrogen is supplied with oxygen during temperature ramp-up and heat treatment, with oxygen limited to 5% during ramp-up and 2% during the treatment. The process is intended to prevent crystal defects known as oxidation-induced stacking faults (OSFs) from forming on the silicon substrate surface. Sakata’s listed portfolio comprises 1 patent.

Career Highlights

Sakata’s listed invention focuses on controlling the atmosphere and temperature used in semiconductor processing. The supplied information identifies Denso Corporation as his company.

Collaborations

Takeshi Kuzuhara and Manabu Koike are identified as Sakata’s coworkers. The supplied details do not specify their roles in the patent or the invention.

Conclusion

Jiro Sakata’s listed patent describes a controlled heat-treatment process designed to reduce OSF crystal defects during semiconductor-device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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