The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Mar. 09, 1999
Atsushi Komura, Kariya, JP;
Takeshi Kuzuhara, Nukata-gun, JP;
Noriyuki Iwamori, Okazaki, JP;
Manabu Koike, Toyoake, JP;
Jiro Sakata, Aichi-gun, JP;
Hirofumi Funahashi, Aichi-gun, JP;
Kenji Nakashima, Aichi-gun, JP;
Masahiko Ishii, Aichi-gun, JP;
Denso Corporation, Kariya, JP;
Abstract
In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950° C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.