Yokohama, Japan

Jiro Higuchi

This inventor holds 1 USPTO granted patent. Top assignee: Kioxia Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiro Higuchi. Retrieved from https://idiyas.com/inventor/jiro-higuchi-f97kxgj4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Jiro Higuchi: Innovator in Semiconductor Technology

Introduction

Jiro Higuchi is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in stress analysis.

Latest Patents

Higuchi holds a patent for a "Stress analysis method and semiconductor device manufacturing method." This patent outlines a method that involves dividing the surface of an object into multiple rectangles and acquiring specific values for each. The process further includes identifying rectangles that meet certain criteria and generating a stress model based on these selections. He has 1 patent to his name.

Career Highlights

Higuchi is currently employed at Kioxia Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in improving manufacturing processes and enhancing device performance.

Collaborations

Throughout his career, Higuchi has collaborated with notable colleagues, including Hiroshi Yoshimura and Kazuyuki Hino. These partnerships have fostered innovation and contributed to the success of various projects.

Conclusion

Jiro Higuchi's contributions to semiconductor technology through his innovative methods and collaborations highlight his importance in the field. His work continues to influence advancements in manufacturing processes and device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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