Jinhwan Lee

Title: Jinhwan Lee: Innovator in Semiconductor Technology

Introduction

Jinhwan Lee is a prominent inventor based in Raleigh, NC (US), known for his significant contributions to semiconductor technology. With a total of 5 patents, he has made remarkable advancements in the field of dynamic random access memory (DRAM) and semiconductor fabrication processes.

Latest Patents

One of Jinhwan's latest patents is titled "High density DRAM with reduced peripheral device area and method of manufacture." This patent discloses a dynamic random access memory (DRAM) structure that features a distance of less than 0.14 um between the contacts to silicon and the gate conductor. Additionally, it includes a method for forming this structure, which involves the simultaneous formation of the DRAM array contacts and the contacts to silicon. Another notable patent is "Maskless middle-of-line liner deposition," which describes a process for fabricating a semiconductor structure that includes both a core region and a periphery region. This process utilizes plasma enhanced chemical vapor deposition to control the amount of middle-of-line liner deposited in both regions, depending on the distances between transistors.

Career Highlights

Jinhwan Lee is currently employed at Infineon Technologies AG, where he continues to innovate and develop cutting-edge semiconductor technologies. His work has significantly impacted the efficiency and performance of semiconductor devices.

Collaborations

Jinhwan has collaborated with notable colleagues, including Michael Maldei and Brian Cousineau, contributing to various projects and advancements in semiconductor technology.

Conclusion

Jinhwan Lee's innovative work in semiconductor technology, particularly in DRAM and fabrication processes, showcases his expertise and dedication to advancing the field. His contributions are vital to the ongoing evolution of semiconductor devices.