Infineon Technologies Ag

Jinhwan Lee

Guenter Gerstmeier

Michael Maldei

Steven Michael Baker

Jon Stanley Berry, Ii

Brian Cousineau

Malati Hedge

George William Alexander

A dynamic random access memory (DRAM) structure having a distance less than 0.14 um between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.

High density DRAM with reduced peripheral device area and method of manufacture

A process for fabricating a semiconductor structure, wherein the semiconductor structure includes a core region and a periphery region. The core region includes a plurality of transistors and the periphery region includes a plurality of transistors. The process includes depositing a middle-of-line liner using plasma enhanced chemical vapor deposition overlying the semiconductor structure. By using a plasma enhanced chemical vapor deposition the amount of MOL liner deposited in the core region and the periphery region can be controlled depending on the distances between transistors in the core region and periphery region.

Maskless middle-of-line liner deposition

A dynamic random access memory (DRAM) structure having a distance less than 0.14 &#x3bc;m between the contacts to silicon and the gate conductor is disclosed. In addition a method for forming the structure is disclosed, which includes forming the DRAM array contacts and the contacts to silicon simultaneously.

A delay lock loop circuit includes a forward delay circuit having a plurality of delay elements. Each delay element has a delay time of one unit delay time. The forward delay circuit and each of the delay elements are powered by a supply voltage. The supply voltage is set to thereby set the duration of a unit delay time. Moreover, a feedback delay circuit is provided in order to cause a feedback delay time being substantially equal to a propagation delay of the IC. As the operating conditions of IC change, and the propagation delay thereof increases or decreases, the feedback delay time changes accordingly, and thus the delay caused by forward delay circuit tracks the change in the propagation delay of the IC.

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Raleigh, NC, United States of America

Jinhwan Lee