Yongin, South Korea

JinHo You

This inventor holds 1 USPTO granted patent. Top assignees: Enf Technology Co., Ltd., Skhynix Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: JinHo You. Retrieved from https://idiyas.com/inventor/jinho-you-wclku4n0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: JinHo You: Semiconductor Substrate Cleaning Innovation.

Introduction

JinHo You is an inventor based in Yongin, South Korea. His patent work addresses a challenge in semiconductor manufacturing: cleaning substrates with fine, high-aspect-ratio patterns while helping prevent pattern collapse.

Latest Patents

The provided information lists one patent for JinHo You: “Cleaning Agent Composition for Substrate for Semiconductor Devices and Method for Cleaning Substrate for Semiconductor Devices Using the Same.” The invention describes a cleaning composition containing a silicon-based compound represented by Formula 1 and an aprotic organic solvent with a dielectric constant of 10 or less. The composition can form a protective film on the substrate surface, helping prevent pattern collapse during wet cleaning and supporting improved semiconductor manufacturing yield. His listed patent count is 1 patent.

Career Highlights

The supplied career information associates You with Enf Technology Co., Ltd. and SK hynix Inc. His patent reflects work focused on semiconductor substrate cleaning and the protection of delicate device patterns.

Collaborations

Hye Ji Kim and Hag Sung Lee are identified as You’s coworkers. The information provided does not specify their roles in the patent or the nature of their collaboration.

Conclusion

JinHo You’s listed invention focuses on protecting fine semiconductor patterns during wet cleaning, addressing a manufacturing challenge with potential benefits for device yield.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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