Singapore, Singapore

Jinglin Shi

This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries Singapore Pte. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jinglin Shi. Retrieved from https://idiyas.com/inventor/jinglin-shi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jinglin Shi and Semiconductor Capacitor Innovation.

Introduction

Jinglin Shi is an inventor associated with GlobalFoundries Singapore Pte. Ltd. in Singapore. Her patent work concerns capacitor structures for semiconductor devices and integrated circuit chips.

Latest Patents

Shi is credited with 1 patent, titled “Capacitors with Floating Metal Layers.” The invention describes a metal-dielectric-metal capacitor with electrically floating metal layers and an interconnect level that contains no metal layers. Its structure places metal layers across multiple interconnect levels above a substrate, with the floating layers in the second level and a metal-free third level between them and the fourth level. This arrangement addresses capacitor design within semiconductor devices and integrated circuits.

Career Highlights

Shi’s listed patent reflects work on interconnect and capacitor architecture in semiconductor technology. Her professional affiliation is GlobalFoundries Singapore Pte. Ltd.

Collaborations

The supplied information lists Wanbing Yi and Ee Jan Khor as Shi’s coworkers. Their names are provided as professional associations, without further details about their roles in the patent.

Conclusion

Jinglin Shi’s patent highlights a capacitor design that uses electrically floating metal layers and a metal-free interconnect level, contributing to innovation in semiconductor and integrated-circuit structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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