Hunan, China

Jingjing Shi

This inventor holds 1 USPTO granted patent. Top assignee: Zhuzhou Crrc Times Electric Co., Ltd. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jingjing Shi. Retrieved from https://idiyas.com/inventor/jingjing-shi-n0ogcf7e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Jingjing Shi: Innovator in Silicon Carbide Technology

Introduction

Jingjing Shi is an accomplished inventor based in Hunan, China. With a notable patent to her name, she has made significant contributions to the field of semiconductor technology, specifically in the development of silicon carbide MOSFET devices. Her innovation reflects a deep understanding of electronic components and their manufacturing processes.

Latest Patents

Jingjing Shi's sole patent focuses on a "Silicon carbide MOSFET device and method for manufacturing the same." This revolutionary device features a gate oxide layer consisting of two distinct parts, designed with different thicknesses. The innovation of a staircase-shaped gate oxide layer effectively reduces the electric field strength without compromising the threshold voltage or gate control properties. Additionally, the device offers reduced on-resistance by increasing the width of the JFET region, making it a significant advancement in the industry.

Career Highlights

Jingjing is currently associated with Zhuzhou CRRC Times Electric Co., Ltd., a leading company in the electric equipment sector. Her work there emphasizes the intersection of electrical engineering and innovative manufacturing techniques. She has showcased her expertise through her patent, highlighting her role as an influential inventor in her field.

Collaborations

Throughout her career, Jingjing has worked alongside notable colleagues, including Yunbin Gao and Chengzhan Li. Their collaborative efforts contribute to a robust team environment focused on innovation and technological advancement, driving progress within their industry.

Conclusion

Jingjing Shi's contributions to silicon carbide technology underscore her position as a pioneering inventor. With her pioneering patent and collaborative spirit at Zhuzhou CRRC Times Electric Co., Ltd., she continues to influence the landscape of electronic components. Her work not only advances technology but also sets a foundation for future innovations in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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