Jing-Horng Gan

Title: Jing-Horng Gan: Innovator in Variable Capacitor Technology

Introduction

Jing-Horng Gan is a notable inventor based in Hsinchu Hsien, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of variable capacitor technology. His innovative approach has led to the creation of a unique patent that enhances the functionality of capacitors in various applications.

Latest Patents

Jing-Horng Gan holds a patent for a variable capacitor structure. This invention comprises a substrate featuring a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region, and a conductive layer positioned above. The first type ion-doped well is formed within the substrate and contains a cavity. The first type ion-doped buried layer is located beneath the first type ion-doped well, establishing a connection between the two. The second type ion-doped region is situated at the bottom of the cavity within the first type ion-doped well, while the conductive layer is in contact with the first type ion-doped buried layer. This innovative design allows for improved performance and efficiency in variable capacitors.

Career Highlights

Jing-Horng Gan is currently employed at United Microelectronics Corporation, a leading semiconductor company. His work at this organization has allowed him to collaborate with other talented professionals in the field, further enhancing his expertise and contributions to technology.

Collaborations

One of his notable coworkers is Anchor Chen, with whom he has likely shared insights and knowledge in their respective areas of expertise.

Conclusion

Jing-Horng Gan's contributions to variable capacitor technology exemplify the innovative spirit of modern inventors. His patent reflects a significant advancement in the field, showcasing his dedication to improving electronic components.