Isahaya, Japan

Jin Sato

This inventor holds 1 USPTO granted patent. Top assignee: Mitsubishi Electric Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Sato. Retrieved from https://idiyas.com/inventor/jin-sato-6ps9dcnc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jin Sato: Innovator in Semiconductor Technology

Introduction: Jin Sato is a prominent inventor based in Isahaya, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor module that enhances manufacturing processes.

Latest Patents: Jin Sato holds 1 patent for his invention titled "Semiconductor module and method of manufacturing same." This patent describes a semiconductor module that includes a sub-mount with a front surface, back surface, and side surfaces. A semiconductor element is soldered onto the front surface, while a block is soldered onto the back surface. The design allows the semiconductor element to protrude outward, facilitating efficient manufacturing and handling.

Career Highlights: Jin Sato has built a successful career at Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise and innovative mindset have positioned him as a key player in the industry.

Collaborations: Jin has collaborated with notable coworkers, including Yutaka Yoneda and Junji Fujino. Their combined efforts have contributed to the success of various projects within the company.

Conclusion: Jin Sato's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Mitsubishi Electric Corporation highlight his role as a leading inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…