Company Filing History:
Years Active: 2019-2020
Title: Jin-bae Bang: Innovator in Non-Volatile Memory Technology
Introduction
Jin-bae Bang is a prominent inventor based in Anyang-si, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of memory technology, which is crucial in today's digital landscape.
Latest Patents
Jin-bae Bang's latest patents include innovative designs for non-volatile memory devices. The first patent describes a non-volatile memory device that features a memory cell array with multiple memory cells. This device incorporates a page buffer that performs several read operations, storing the results of these operations. A multi-sensing manager is also included, which determines the number of sensing operations for each read operation, ensuring optimal performance. The second patent outlines a nonvolatile memory device with multi-level cells and a unique sensing method. This method involves precharging a bit line and a sense-out node, identifying the state of selected memory cells through a series of voltage level measurements.
Career Highlights
Jin-bae Bang is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His role involves research and development in memory technology, where he applies his expertise to create advanced memory solutions. His contributions have been instrumental in enhancing the capabilities of non-volatile memory devices.
Collaborations
Throughout his career, Jin-bae Bang has collaborated with notable colleagues, including Dae-seok Byeon and Ji-Su Kim. These partnerships have fostered innovation and have led to the successful development of cutting-edge memory technologies.
Conclusion
Jin-bae Bang is a key figure in the advancement of non-volatile memory technology. His patents and work at Samsung Electronics Co., Ltd. reflect his commitment to innovation in this critical field. His contributions continue to shape the future of memory devices, making a lasting impact on technology.
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