The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Mar. 16, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Chung-Ho Yu, Hwaseong-si, KR;
Dae-Seok Byeon, Seongnam-si, KR;
Jin-Bae Bang, Anyang-si, KR;
Cheon-An Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes multi-level cells. A sensing method of the nonvolatile memory device includes: precharging a bit line and a sense-out node during a first precharge interval; identifying a first state of a selected memory cell, by developing the sense-out node during a first develop time and sensing a first voltage level of the sense-out node; precharging the sense-out node to a second sense-out precharge voltage; and identifying the first state of the selected memory cell from a second state adjacent thereto, by developing the sense-out node during a second develop time different from the first develop time and sensing a second voltage level of the sense-out node.