Jim S Liang

Title: Jim S Liang: Innovator in Semiconductor Technology

Introduction

Jim S Liang is a prominent inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and reliability of integrated circuits.

Latest Patents

Among his latest patents is a method to reduce resistance for a copper (Cu) interconnect landing on multilayered metal contacts. This innovative method involves forming a semiconductor structure that includes a first insulating layer with a first metal layer embedded within it. The process also includes the formation of an inter-layer dielectric (ILD) layer and a via trench structure, which enhances the performance of semiconductor devices. Another notable patent is for an integrated circuit (IC) structure with a metal crack stop. This IC structure features a barrier film and an interlayer dielectric, designed to prevent metal cracks and improve the durability of semiconductor devices.

Career Highlights

Jim S Liang is currently employed at GlobalFoundries Inc., where he continues to advance semiconductor technology. His expertise in the field has led to numerous innovations that benefit the industry.

Collaborations

Jim has collaborated with notable colleagues, including Atsushi Ogino and Roger Allan Quon, contributing to various projects that enhance semiconductor design and manufacturing.

Conclusion

Jim S Liang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of integrated circuits and semiconductor devices.