The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Aug. 27, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Jim S. Liang, Poughkeepsie, NY (US);
Atsushi Ogino, Fishkill, NY (US);
Stephen E. Greco, Stamford, CT (US);
Roger A. Quon, Rhinebeck, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/31 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32051 (2013.01); H01L 21/32139 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53257 (2013.01);
Abstract
A first aspect of the disclosure provides for an integrated circuit structure. The integrated circuit structure may comprise a first metal structure in a first dielectric layer on a substrate in a crack stop area; and a first crack stop structure in a second dielectric layer, the first crack stop structure being over the first metal structure and including: a first metal fill contacting the first metal structure; and an air seam substantially separating the first metal fill and the second dielectric layer.