Shanghai, China

Jiaxi Li

This inventor holds 1 USPTO granted patent. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiaxi Li. Retrieved from https://idiyas.com/inventor/jiaxi-li-uo8egnlz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Jiaxi Li - Innovator in Semiconductor Technology

Introduction

Jiaxi Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and its fabrication method.

Latest Patents

Jiaxi Li holds 1 patent for his invention titled "Semiconductor structure and fabrication method thereof." This patent describes a semiconductor structure and a method for forming it. The method includes several steps, such as providing a to-be-etched layer, forming a pattern material layer, and creating doped regions using a sacrificial layer as a mask.

Career Highlights

Throughout his career, Jiaxi Li has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has contributed to his expertise in semiconductor fabrication.

Collaborations

Jiaxi Li has collaborated with several professionals in his field, including Yafeng Qian and Ying Nan Li. These collaborations have further enhanced his work and contributions to semiconductor technology.

Conclusion

Jiaxi Li is a dedicated inventor whose work in semiconductor technology has made a significant impact. His innovative patent and career achievements reflect his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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