Oak Ridge, TN, United States of America

Jianhua Wan

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Other. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jianhua Wan. Retrieved from https://idiyas.com/inventor/jianhua-wan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Jianhua Wan in Semiconductor Technology

Introduction

Jianhua Wan is an accomplished inventor based in Oak Ridge, TN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of gamma ray detectors. His innovative work has the potential to enhance the efficiency and performance of radiation detection systems.

Latest Patents

Jianhua Wan holds a patent for a "Semiconductor gamma ray detector element configuration of axially series multi-chamber structure for improving detector depletion plan." This invention involves a High Purity Germanium (HPGe) radiation detector that has been specially machined to create a series multi-chamber coaxial configuration. This design allows for the production of extra-large volume HPGe detectors using currently available HPGe crystals. The unique optimization of the detector body structure in accordance with the semiconductor crystal ingot situation facilitates easier depletion and better collection of photo-induced carriers as signal output. This innovation enables the production of HPGe gamma ray detectors with efficiencies ranging from 100% to 200%, and potentially even higher, based on the current HPGe crystal supply capability. The invention significantly improves detector performance for very high energy gamma ray detection and could be applicable to other semiconductor materials in the future.

Career Highlights

Throughout his career, Jianhua Wan has demonstrated a commitment to advancing semiconductor technology. His work has not only contributed to the field but has also paved the way for future innovations in radiation detection.

Collaborations

Jianhua Wan has collaborated with notable colleagues, including Yongdong Zhou and Xiao Ping Zhou. Their combined expertise has further enhanced the development of innovative technologies in their field.

Conclusion

Jianhua Wan's contributions to semiconductor technology, particularly in gamma ray detection, highlight his role as a leading inventor in this area. His innovative patent has the potential to revolutionize the efficiency of radiation detectors, making significant strides in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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