Company Filing History:
Years Active: 1999-2002
Title: Jiang Tao: Innovator in Semiconductor Technology
Introduction
Jiang Tao is a prominent inventor based in Fremont, CA, known for his contributions to semiconductor technology. With a total of 4 patents, he has made significant advancements in the field, particularly in the area of gate dielectric layers in MOSFETs.
Latest Patents
One of Jiang Tao's latest patents is a method for determining transistor gate oxide thickness. This innovative method addresses the challenge of measuring the electrical thickness of very thin gate oxide layers that are subject to high leakage currents. By measuring first and second frequency-dependent capacitances, he is able to render a corrected capacitance, leading to a more accurate determination of gate oxide electrical thickness. Another notable patent involves assessing plasma-induced gate dielectric degradation with stress induced. This patent outlines a technique for monitoring plasma-induced damage during semiconductor manufacturing by measuring stress-induced leakage current as a function of time.
Career Highlights
Jiang Tao is currently employed at Advanced Micro Devices Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.
Collaborations
Jiang collaborates with Peng Fang, a fellow innovator in the field, to further advance their research and development efforts.
Conclusion
Jiang Tao's contributions to semiconductor technology through his patents and work at Advanced Micro Devices Corporation highlight his role as a key innovator in the industry. His research continues to impact the field significantly.