The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Aug. 08, 2000
Applicant:
Inventor:
Jiang Tao, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract
A method for determining the electrical thickness of a very thin gate oxide layer of a MOSFET that is subject to relatively high leakage current owing to its thinness includes measuring first and second frequency-dependent capacitances C , C and then using the capacitances to render a corrected capacitance. The electrical thickness is then determined using not the measured capacitances, but rather the corrected capacitance, to render a comparatively more accurate value of gate oxide electrical thickness T .